| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce a gate tunnel current during standby required for a low power consumption. SOLUTION: As a transistor to become an on-state during standby, transistors (PQa, PQc, NQb and NQa) each having a large gate tunnel barrier are used. As a transistor to become an off-state during standby, a thin MIS transistor of a gate insulating film is used. As a hierarchical power source constitution, main and sub-power source lines (30, 32) and main and sub-ground lines (34, 36) are isolated during standby.</p> |
