发明名称 |
REDUCTION OF IMPRINT IN FERROELECTRIC DEVICES USING DEPOLYING TECHNIQUE |
摘要 |
PURPOSE: A method using a depolying technique is provided to reduce or eliminate imprint effects in ferroelectric device without exposing the ferroelectric device to excessive temperatures. CONSTITUTION: A method for reducing imprint in a ferroelectric device includes the steps of: applying a signal having a bipolar pulse shape for a predetermined time to the ferroelectric device(100) and decreasing the signal amplitude gradually in predetermined intervals of time and amplitude. Preferably, the bipolar shape signal is a sinusoidal wave, a square wave, or a sawtooth wave and the ferroelectric device(100) is a capacitor of a memory cell in a computer. Also provided is an apparatus for reducing imprint in a ferroelectric device.
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申请公布号 |
KR20020015935(A) |
申请公布日期 |
2002.03.02 |
申请号 |
KR20010018838 |
申请日期 |
2001.04.10 |
申请人 |
NEC CORPORATION |
发明人 |
BHATTACHARYA SABYASACHI;HIGGINS MARK J.;KRISHNAN AJIT;TREACY MICHAEL M. J. |
分类号 |
G11C11/22;H01L21/02;H01L21/8246;H01L27/105;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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