发明名称 REDUCTION OF IMPRINT IN FERROELECTRIC DEVICES USING DEPOLYING TECHNIQUE
摘要 PURPOSE: A method using a depolying technique is provided to reduce or eliminate imprint effects in ferroelectric device without exposing the ferroelectric device to excessive temperatures. CONSTITUTION: A method for reducing imprint in a ferroelectric device includes the steps of: applying a signal having a bipolar pulse shape for a predetermined time to the ferroelectric device(100) and decreasing the signal amplitude gradually in predetermined intervals of time and amplitude. Preferably, the bipolar shape signal is a sinusoidal wave, a square wave, or a sawtooth wave and the ferroelectric device(100) is a capacitor of a memory cell in a computer. Also provided is an apparatus for reducing imprint in a ferroelectric device.
申请公布号 KR20020015935(A) 申请公布日期 2002.03.02
申请号 KR20010018838 申请日期 2001.04.10
申请人 NEC CORPORATION 发明人 BHATTACHARYA SABYASACHI;HIGGINS MARK J.;KRISHNAN AJIT;TREACY MICHAEL M. J.
分类号 G11C11/22;H01L21/02;H01L21/8246;H01L27/105;(IPC1-7):G11C11/22 主分类号 G11C11/22
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