| 摘要 |
A method for fabricating a dielectrically isolated silicon carbide high temperature pressure transducer which is capable of operating at temperatures above 600° C. The method comprises applying a layer of beta silicon carbide of a first conductivity, on a first substrate of silicon. A layer of beta silicon carbide of a second conductivity is then applied on a second substrate. A layer of silicon is sputtered, evaporated or otherwise formed on the silicon carbide surfaces of each of the substrates of the beta silicon carbide. The sputtered silicon layer on each substrate is then completely oxidized forming a layer of SiO2 from the silicon. The first and second substrates are subsequently fusion bonded together along the oxide layers of the first and second substrate with the oxide layer providing dielectric isolation between the first and second wafers. This oxide layer, which is formed from the Si layer, has a much lower defect density than SiO2 formed directly from SiC. At least one sensing element is then fabricated from the beta silicon carbide of the second conductivity, and the overlaying original silicon on the second substrate is moved.
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