| 摘要 |
A semiconductor device comprising an electrostatic protective element of the semiconductor device including a first conductivity type substrate and a second conductivity type high concentration diffusion layer formed on a surface of the substrate, and a semiconductor element including a source/drain and a gate electrode, wherein a first conductivity type diffusion layer having a higher concentration than the first conductivity type substrate is provided in an entire region under the second conductivity type high concentration diffusion layer.
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