| 摘要 |
PROBLEM TO BE SOLVED: To make proper the shape of an organic film pattern obtained by a surface-resolving process. SOLUTION: After an organic film 12 is formed on a silicon oxide film 11, positive chemical amplification type resist is applied onto the organic film 12 to form a resist film 13. After pattern exposure has been carried out by irradiating the resist film 13 by an F2 excimer laser 15 via a photomask 14, heat treatment is carried out to desorb a protective group from the exposed part of the resist film 13. After the resist pattern 113A formed of an unexposed part of the resist film 13 is formed, the resist pattern 13A is irradiated with a 254 nm light 16, and heat treatment is carried out to a protection group from the resist pattern 13A. After a sylilation layer is formed on the resist pattern 13A through a sylilation process, the organic film 12 is etched with plasma through the sylilation layer as a mask to form an organic film pattern. |
