| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly sensitive non-cooling type infrared sensor at a low cost. SOLUTION: This infrared sensor is provided with infrared ray absorbing parts 201 and 202 absorbing an infrared ray, a thermoelectric conversion part 9 converting a temperature change due to the infrared ray absorbed in the infrared ray absorbing parts 201 and 202 into an electric signal, a plurality of infrared ray detection pixels arranged on a base board 6 and each provided with a supporting structure, which is formed on the base board 6 for supporting the thermoelectric conversion part 9 via a clearance and provided with wires 101 and 103 outputting the electric signal from the thermoelectric conversion part 9, a pixel selection means selecting a pixel to output the electric signal among a plurality of infrared ray detection pixels, and an outputting means outputting the electric signal from the selected infrared ray detection pixel via the wires 101 and 103. At least one of the pixel section means and the outputting means is constructed of a circuit having a MOS type transistor, while the wires 101 and 103 are formed on the same layer as the transistor gate.
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