摘要 |
PURPOSE: A semiconductor device is provided to prevent structural changes which changes a soft jointing material to an intermetallic compound layer by diffusion, and to prevent lowering of reliability due to defects of segregation or the like for occurrence by diffusion in a high-temperature environment or a temperature cycle environment, during assembly or in practical use in a flip-chip assembly of a semiconductor chip. CONSTITUTION: The semiconductor device includes a semiconductor chip(1). A substrate(4) is arranged in opposition to the semiconductor chip. A first electrode(2) is formed on the semiconductor chip(1) and a second electrode(2) is formed on the substrate(4). The first and second electrodes(2) are electrically connected so as to mutually face, and jointed via an intermetallic compound layer(5). The intermetallic compound layer(5) is made of a desired electrode material and a bonding material(3). |