发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A semiconductor device is provided to prevent structural changes which changes a soft jointing material to an intermetallic compound layer by diffusion, and to prevent lowering of reliability due to defects of segregation or the like for occurrence by diffusion in a high-temperature environment or a temperature cycle environment, during assembly or in practical use in a flip-chip assembly of a semiconductor chip. CONSTITUTION: The semiconductor device includes a semiconductor chip(1). A substrate(4) is arranged in opposition to the semiconductor chip. A first electrode(2) is formed on the semiconductor chip(1) and a second electrode(2) is formed on the substrate(4). The first and second electrodes(2) are electrically connected so as to mutually face, and jointed via an intermetallic compound layer(5). The intermetallic compound layer(5) is made of a desired electrode material and a bonding material(3).
申请公布号 KR20020027220(A) 申请公布日期 2002.04.13
申请号 KR20010061105 申请日期 2001.10.04
申请人 KABUSHIKI KAISHA TOSHIBA;MITSUBISHI ELECTRIC CORPORATION;NEC CORPORATION 发明人 TAGO MASAMOTO;TAKAHASHI KENJI;TOMITA YOSHIHIRO
分类号 H01L21/60 主分类号 H01L21/60
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