DYNAMIC RANDOM ACCESS MEMORY DEVICE HAVING ENLARGED CHANNEL WIDTH IN CELL TRANSISTOR

摘要

PURPOSE: A dynamic random access memory(DRAM) device having an enlarged channel width in a cell transistor is provided to effectively control a reverse narrow width effect, by changing the pattern of an exposure mask in forming an isolation layer so that the width of an active region is enlarged. CONSTITUTION: Active regions(112) periodically disposed in a cell region are diagonally aligned. The respective active regions have a major axis perpendicular to a gate line(14). The intermediate portion of the active region is thicker than both side ends of the active region with respect to the direction of the major axis.