| 摘要 |
PURPOSE: A method for annealing a semiconductor wafer is provided to decrease the size of a grown-in defect like a crystal originated particle(COP), by taking out an oxidation-induced stacking fault(OSF) ring from the center of a single crystal axis direction to the edge. CONSTITUTION: The first heat treatment process is performed regarding the semiconductor wafer at a temperature of 1200 deg.C for 20-180 minutes. A rapid thermal annealing(RTA) process is performed regarding the semiconductor wafer at a temperature not higher than 800 deg.C. The first heat treatment process is performed in an atmosphere of hydrogen, inert gas, mixture gas of hydrogen and inert gas or mixture gas of oxygen and inert gas.
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