| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve write-in characteristic operations of a static type memory cell and to improve the lower limiting voltage characteristic and stability. SOLUTION: Adjusting circuits (10a-10c) are provided corresponding to each row of memory cells (MCA-MCC) at write-in of data, data-holding characteristic at write-in of data of the memory cell is made to be degraded, conforming to a row-selecting signal and a write-in indicating signal on a word line.</p> |
