发明名称 METHOD FOR PRODUCING MULTIPLE OXIDE-BASED SINGLE CRYSTAL FILM, AND MULTIPLE OXIDE-BASED SINGLE CRYSTAL FILM PRODUCED BY THE METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method of producing a multiple oxide-based single crystal film, by which the single crystal film capable of being used as an electronic device and almost free from defects in the combination of various kinds of substrates and a melt, and to provide the multiple oxide-based single crystal film produced by the method. SOLUTION: The single crystal film is produced by combining the liquid phase epitaxy action by a single crystal substrate 5, the action caused by control of crystal growth orientation by temperature gradient of a liquid phase-solid phase interface 10 and the action caused by movement of the liquid phase-solid phase interface 10 and control of wettability of the single crystal substrate 5 and the liquid phase.
申请公布号 JP2002121098(A) 申请公布日期 2002.04.23
申请号 JP20000308973 申请日期 2000.10.10
申请人 JAPAN SCIENCE & TECHNOLOGY CORP 发明人 YASUDA TAKASHI;TOUCHI MASAKICHI
分类号 C30B29/22;C30B19/10;H01L39/24;(IPC1-7):C30B29/22 主分类号 C30B29/22
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