发明名称 |
Methods for eliminating metal corrosion by FSG |
摘要 |
A method of fabricating metal plugs within via openings comprising the following steps. A semiconductor substrate having an overlying metal layer and oxide hard masks overlying the metal layer is provided. The oxide hard masks are used to etch the metal layer to form metal lines separated by metal line openings. An oxide liner is formed over the etched structure. A layer of FSG is deposited over the oxide liner. The FSG layer is then planarized to remove: the excess of the FSG layer from the etched structure; and the portions of the oxide liner over the oxide hard masks to form FSG blocks within the metal line openings. A cap layer is formed over the planarized structure. The cap layer and hard masks are then planarized to form via openings exposing the metal lines. Planarized metal plugs are then within the via openings.
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申请公布号 |
US6380066(B1) |
申请公布日期 |
2002.04.30 |
申请号 |
US20000531783 |
申请日期 |
2000.03.21 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
SEE ALEX;TEO KOK HIN;TANG KOK HIANG |
分类号 |
H01L21/3105;H01L21/316;H01L21/3213;H01L21/60;H01L21/768;(IPC1-7):H01L21/476;H01L21/76 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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