发明名称 |
Method of correcting line width variation due to loading effect caused during etching of a photomask and recording medium formed according to the method |
摘要 |
A method of exposing a photomask substrate, provides an exposing method for correcting a loading effect generated when a photomask substrate is dry etched. Accordingly, a variation in line width caused by a loading effect generated due to the non-uniformity of a loading density is reduced by a method of performing correction exposure using a dose corresponding to the loading effect due to a desired pattern which is calculated from a relationship represented as the convolution of a Gaussian distribution and a loading density.
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申请公布号 |
US2002051916(A1) |
申请公布日期 |
2002.05.02 |
申请号 |
US20010839189 |
申请日期 |
2001.04.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KI WON-TAI |
分类号 |
H01L21/027;G03F1/14;(IPC1-7):G03C5/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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