| 摘要 |
PURPOSE: To increase electrostatic capacity of an information storing capacitor and to reduce its leakage current. CONSTITUTION: The information storing capacitor is produced according to following processes: a process (1) for forming a polycrystalline silicon lower electrode having formed semispherical silicon crystals on its surface, a process (2) for nitrizing the surface of the lower electrode by a plasma at a low temperature which is not higher than 550°C, to form a silicon nitride film having thickness which is not smaller than 1.5 nm, and a process (3) for depositing thereon an amorphous tantalum pentoxide film to crystallize it thereafter. Thereby, the oxidation resistance of the silicon nitride film is improved to reduce its leakage current. As a result, by suppressing oxidation of the polycrystalline silicon lower electrode, the electrostatic capacity of the information storing capacitor is increased, and the leakage current of the capacitor is suppressed.
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