发明名称 VOLTAGE GENERATION CONTROL CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A voltage generation control circuit of a semiconductor device is provided to optimize the number of pump in a voltage generator by installing a register within a semiconductor device. CONSTITUTION: A voltage generation portion(100) has a multitude of pumps in order to receive an external supply voltage and generate an internal supply voltage. A register portion(200) is used for storing an external input signal or an output signal of a detection circuit portion(400) and outputs a stored value to a control logic portion(300). The control logic portion(300) receives a signal from the register portion(200) and controls the number of air pump and the number of active pump of the voltage generation portion(100). The detection circuit portion(400) outputs an internal supply voltage change signal to the register portion(200) and an increase/decrease control portion(500). The increase/decrease control portion(500) increases or decreases a storing value of the register portion(200) according to an input signal of the detection circuit portion(400).
申请公布号 KR20020031838(A) 申请公布日期 2002.05.03
申请号 KR20000062588 申请日期 2000.10.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JU SANG
分类号 G11C5/14;H02M3/07;(IPC1-7):G11C5/14 主分类号 G11C5/14
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