| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent damage of a semiconductor substrate due to over-etch of a thick oxide layer used as a salicide block layer and to prevent degradation of transistor characteristics due to hydrogen effect and stress caused by a nitride layer alternatively used as the salicide block layer. CONSTITUTION: After a device isolation layer(22) is formed in the substrate(21) having first and second regions, a gate insulating layer(23) and a gate electrode(24) are formed on the substrate(21). An insulating sidewall is then formed on lateral sides of the gate electrode(24), and a source/drain(26) is formed in the substrate(21) outside the gate electrode(24). Next, a titanium nitride layer(27) is formed as the salicide block layer on the second region of the substrate(21). Then a refractory metal layer(28) of cobalt or titanium is wholly formed thereon. By performing an annealing process, a metal salicide layer is formed on top surfaces of the source/drain(26) and the gate electrode(24). Next, non-reacted portions of the metal layer(28) and the titanium nitride layer(27) are removed.
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