发明名称 WET PROCESS IN MANUFACTURING SEMICONDUCTOR ELEMENT USING ANODIC WATER CONTAINING OXIDATIVE MATERIAL AND/OR CATHODIC WATER CONTAINING REDUCING MATERIAL AND ANODIC WATER AND/OR CATHODIC WATER USED IN THIS PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a wet process in manufacturing semiconductor elements using cathodic water and/or anodic water and the electrolyzed cathodic water and/or anodic water used in this process. SOLUTION: This process includes an anode chamber and a cathode chamber and an intermediate chamber between the anode chamber and the cathode chamber. The respective chambers consist of structures separated by ion exchange membranes. The anodic water containing the oxidative material obtained by supplying pure water to the anode chamber and cathode chamber of three-chamber type electrolyzing equipment and packing an aqueous electrolyte solution into the intermediate chamber, then electrolyzing the same and the cathodic water containing the reducing material are used in the wet process in manufacturing the semiconductor elements using the anodic water or the cathodic water. As a result, even if a small amount of the chemical materials, i.e., a small amount of the electrolytes are used, the cathodic water and anodic water having a desired pH and ORP characteristics are simultaneously formed and both of the cathodic water and the anodic water have the characteristics to make the water usable in the wet process step.
申请公布号 JP2002146574(A) 申请公布日期 2002.05.22
申请号 JP20010223094 申请日期 2001.07.24
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 BOKU JINSHU;RI KONTAKU;KEN EIBIN;KA SHOROKU;SHIM WOO-GWAN;KO HYUNG-HO
分类号 C02F1/46;C02F1/461;C25B1/04;C25B9/00;H01L21/02;H01L21/30;H01L21/304;H01L21/306;H01L21/3105;H01L21/311;H01L21/321;H01L21/3213;H01L21/768;H01L23/522;(IPC1-7):C25B1/04 主分类号 C02F1/46
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