| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a transfer mask by which the attachment of patterned pieces is reduced in etching. SOLUTION: The method is the one for making a transfer mask, having an aperture pattern for controlling the shape of a charged particle beam on a substrate. When the aperture pattern is formed, at least one aperture pattern is divided into a plurality of patterns, and the patterned pieces in the divided aperture portions are removed. Furthermore, the inside of the aperture pattern is formed and divided into squares.</p> |
