NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To improve convergency and to perform high speed erasure in erasure operation of a non-volatile semiconductor memory. SOLUTION: A word latch circuit is provided for each word line, and threshold value control is performed for each word line in a selection block. The latch circuit shares plural word lines, and occupancy area is reduced. Rewriting voltage is set individually to a completed non-volatile memory, stored in a boot region of the non-volatile memory, and recognizing anew is performed for each a supplying of a power source.