发明名称 Semiconductor memory device and data read method thereof
摘要 Disclosed is a semiconductor memory device and a data read method thereof. The semiconductor memory device comprises a memory cell array comprising a plurality of sub-arrays, said sub-arrays comprising a plurality of memory cells and repeaters, wherein each of said memory cells is connected to a corresponding pair of read word lines, a corresponding pair of read bitlines, a corresponding pair of write word lines, and a corresponding pair of write bitlines, and wherein each of said repeaters is connected to said corresponding pair of read bitlines of each said memory cell and a corresponding pair of common main read bitlines so as to transmit read data from said corresponding pair of read bitlines to said corresponding pair of common main read bitlines in response to an applied enable control signal.
申请公布号 US2002060938(A1) 申请公布日期 2002.05.23
申请号 US20010037908 申请日期 2001.11.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG TAE JOONG;PARK IN KYU
分类号 G11C7/10;G11C7/18;G11C8/16;(IPC1-7):G11C29/00 主分类号 G11C7/10
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