METHOD FOR FABRICATING TUNNEL JUNCTION LAYER

摘要

PURPOSE: A method for fabricating a tunnel junction layer is provided, which reduces a driving voltage and a threshold current of a light emitting device using a nitride semiconductor. CONSTITUTION: According to the method, a p-type nitride semiconductor thin film(50) doped with a p-type dopant is formed, and then an n-type nitride semiconductor thin film(60) doped with an n-type dopant is formed on the p-type nitride semiconductor thin film. The nitride semiconductor thin films are formed as thick as 10-500 angstrom in a temperature range of 800-1200 deg.C using a MOCVD(Metalorganic Chemical Vapor Deposition). The n-type nitride semiconductor thin film is formed after a growth stop time for 1-1000 sec in a mixed gas atmosphere of an ammonium gas and a transport gas after forming the p-type nitride semiconductor thin film.