| 摘要 |
PURPOSE: A method for fabricating a bit line contact plug using an insulation layer spacer is provided to remarkably reduce contact resistance, by basically preventing generation of a negative slope caused by a difference of an etch rate between a word line insulation layer and a gap-fill layer and by controlling a thermal budget of a silicon substrate caused by a heat treatment process performed regarding the gap-fill layer. CONSTITUTION: A part of an insulation layer formed on the silicon substrate(10) having semiconductor elements like a bit line is removed to form a bit line contact. An oxide layer or nitride layer is formed on the resultant structure by a low pressure chemical vapor deposition(LPCVD) process and is blanket-etched. A diffusion barrier metal layer is deposited on the resultant structure. A metal plug layer is deposited on the metal layer, and is blanket-etched to form a contact plug with no void.
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