发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD AND DESIGN METHOD THEREOF
摘要 <p>PURPOSE: To provide a technique which enables to improve flatness of the surface of members buried in concave parts without increasing the time for manufacturing process. CONSTITUTION: A dummy pattern can be arranged near the boundary BL between an element forming range DA and a dummy area FA by placing in dummy area FA a first dummy pattern DP1 having a relatively large area and a second dummy pattern DP2 having a relatively small area. Thus, flatness of the surface of silicon oxide film that is buried in the separation slot can be improved over the whole area of dummy area FA, and occupying a relatively large area of dummy area FA with first dummy pattern DP1 enables to suppress the increase of the data amount of the mask.</p>
申请公布号 KR20020039232(A) 申请公布日期 2002.05.25
申请号 KR20010068437 申请日期 2001.11.05
申请人 HITACHI ULSI SYSTEMS CO., LTD.;HITACHI, LTD. 发明人 KURODA KENICHI;WATANABE KOUZOU;YAMAMOTO HIROHIKO
分类号 H01L21/76;H01L21/301;H01L21/304;H01L21/3105;H01L21/3205;H01L21/762;H01L23/52;H01L23/528;H01L27/02;H01L27/04;H01L27/08;H01L27/118;(IPC1-7):H01L27/04 主分类号 H01L21/76
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