发明名称 Semiconductor conductive pattern formation method
摘要 A method for forming a conductive or magnetic pattern for a semiconductor or other electronic device includes patterning a mask layer outwardly from a conductive layer of the semiconductor device. The patterning defines portions of the conductive layer where vias through the conductive layer are desired. The method also includes exposing the semiconductor device to a plasma. The plasma converts the unmasked portions of the conductive layer into a compound. The method further includes exposing the semiconductor device to a treatment process to selectively remove the compound. The mask layer may be removed either before or after removal of the compound, thereby providing the unmasked conductive layer in the desired pattern.
申请公布号 US2002072228(A1) 申请公布日期 2002.06.13
申请号 US20000736043 申请日期 2000.12.12
申请人 TEXAS A&M UNIVERSITY SYSTEM 发明人 KUO YUE
分类号 H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):H01L21/00;H01L21/44 主分类号 H01L21/321
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