| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a ferromagnetic non-volatile storage element being superior in stability of information reproduction operation. SOLUTION: This device has a variable resistor r12 which has a hard layer and a soft layer and in which information of one bit is stored in accordance with the direction of magnetization of a hard layer, a bit line BL1 to which one end of the variable resistor r12 is connected and the prescribed current is supplied, a sense amplifier SA1 comparing a first potential generated at the bit line BL1 when the soft layer is magnetized in the first direction of magnetization with a second potential generated at the bit line BL1 when the soft layer is magnetized in the second direction of magnetization being the reverse direction to the first direction of magnetization, and a noise eliminating means comprising transistors (Ta1, Tb1, Tb1') eliminating a noise generated in the bit line BL1 by floating electrically the bit line when magnetization is reversed from the first direction of magnetization of the soft layer to the second direction of magnetization.</p> |
