| 摘要 |
PROBLEM TO BE SOLVED: To improve etching resistance by increasing a resist film thickness in a lithography process step. SOLUTION: The chemical amplification type resist is applied on a wafer substrate 11 to form a first resist layer 12 (S1) and thereafter the exposure of the resist patterns is performed (S2). Material which induces a decomposition reaction or crosslinking reaction by an acid 13 is applied onto the exposed first resist layer 12 (S3) and is subjected to PEB treatment (S4), following which the resist layer is subjected to development by an aqueous alkaline solution (S5). |
