SEMICONDUCTOR CHIP, DEVICE STRUCTURE, METHOD FOR FABRICATING DEVICE STRUCTURE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device having such a hollow wiring structure as the gap between wirings is occupied by a gas in which a semiconductor integrated circuit is protected against mechanical failure at the time of packaging the semiconductor device, electrostatic breakdown of an element is suppressed at the time of machining an interlayer film, and discharge of PFC gas can be prevented. SOLUTION: Lower layer wiring 2 is formed on a wafer embedded in an interlayer film 1, a first wiring layer 13 comprising a silicon film 5 and wiring 12 is formed thereon, and a second wiring layer 17 comprising a silicon film 14 and wiring 15 is formed further thereon. The wafer is then diced into semiconductor chips 18 and the semiconductor chip 18 is connected with a package 20 thus obtaining a device structure 23. It is exposed to xenon difluoride (XeF2) gas for about 10 min thus removing the interlayer films 5 and 14.