| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor laser with good laser oscillation characteristics by allowing a sufficient contact length between a mesa part and an N-type InP layer in a current block layer to suppress a leak current from it. SOLUTION: There are provided an N-type InP substrate 1 where an N-type electrode 10 is formed on the lower surface. A current block layer comprises a mesa part where, being formed on the N-type InP substrate 1, an N-type clad layer 2 comprising N-type InP, an active layer 3, and a P-type clad layer 4 comprising P-type InP are laminated. The N-type clad layer 2 is positioned on both sides of the mesa part, a high resistance block layer 5 is formed on both sides of the mesa part, and an N-type InP block layer 6 is formed on the high resistance block layer 5 and on both sides of the mesa part. Further, there are provided a P-type InP layer 7 formed on the mesa part as well as on the current layer, and a P-type electrode 9 formed on the P-type InP layer 7 with a P-type InGaAs contact layer 8 in between. Here, the contact length between the mesa part and the N-type InP block layer 6 is at least 0.05μm.</p> |
