| 摘要 |
PROBLEM TO BE SOLVED: To improve overlay accuracy between a reticle pattern and a region demarcated on a wafer. SOLUTION: In an aligner, temperature sensors 44A, 44B, and 44C are respectively attached to fine adjustment stage 42A for reticle, an alignment system ALG, and a Z-tilt stage 58 constituting a body 100 of the aligner and, at the same time, an environment sensor unit ES is provided in a chamber 11. A main controller 50 corrects the overlay error between the reticle pattern and a shot area provided on the wafer W by successively calculating the error or measuring the error at prescribed intervals by correcting, for example, a base line value (the positional relation between the projected position of the reticle pattern and the detecting center of the alignment system ALG) in accordance with the temperature changes of the fine adjustment stage 42A, alignment system ALG, tilt stage 58, etc., or a change in temperature, humidity, pressure, etc., in the chamber 11 based on the measured values of the temperature sensors 44A-44C and environment sensor unit ES. |
