| 摘要 |
PROBLEM TO BE SOLVED: To raise the heat dissipation characteristics of a semiconductor device without hindering a miniaturization of the device. SOLUTION: A semiconductor device is constituted in a structure that heat generated in a heating element layer 5 is dissipated to a substrate 1 through plugs 7 and 17, wiring layers 8 and 18 and plugs 9 and 19. The sectional shape of the plugs 7, 9, 17 and 19 provided along the main surface of a substrate 1 is set into a rectangle and the long sides of the rectangle are formed along the direction intersecting orthogonally to the direction connecting one end of the layer 5 with the other end of the layer 5. N-type semiconductor layers 3 and 13 are interposed between the plugs 9 and 19 and a p-type semiconductor layer 2. |
