| 摘要 |
PROBLEM TO BE SOLVED: To provide a finer pattern which can surely and accurately be obtained by making irregularities on the side of a resist pattern smooth, or reducing the resist pattern in line width. SOLUTION: A mask pattern is transferred onto a resist thin film formed on a base layer, and a resist pattern is formed by developing the resist thin film. The resist pattern is irradiated with a prescribed electron beam for fairing. The base layer is subjected to etching through the intermediary of the faired resist pattern, so that the fine pattern can be formed on the base layer. |
