| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor type pressure sensor capable of detecting the pressure with high sensitivity without reducing the accuracy of pressure detection even in a micro-pressure measuring field. SOLUTION: This pressure sensor 10 for high temperature measurement is equipped with a sapphire diaphragm 13 for receiving the pressure of a device under test, a plurality of pressure-sensitive resistance element parts 20 laminated along the circumferential direction of the sapphire diaphragm 13 to constituted a Wheatstone bridge, a plurality of amplification parts 23 for amplifying pressure signals from the plurality of pressure-sensitive resistance element parts 20, respectively, and an addition processing part 25 for adding the pressure signals from the plurality of amplification parts 23. In the sensor, the pressure applied to the outside of the diaphragm 13 is detected.
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