METHOD OF FORMING THIN SEMICONDUCTOR FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, DEVICE USED FOR EXECUTING THE METHODS, AND ELECTRO-OPTIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming semiconductor thin film or a method of manufacturing semiconductor device, with which a high-quality polycrystalline semiconductor thin film of polycrystalline silicon, etc., or single-crystal semiconductor thin film can be formed easily and inexpensively in large area at high crystallization rate, and to provide a device which carries out the methods. SOLUTION: At forming of a polycrystalline (or single-crystal) semiconductor thin film 7, such as a large-particle diameter polycrystalline silicon film, etc., on a substrate 1 at high crystallization rate or manufacturing a semiconductor device having the polycrystalline (or single-crystal) semiconductor thin film 7 on the substrate 1 in the method, a low-crystallinity semiconductor thin film 7A is first formed on the substrate 1. Then the polycrystalline (or single-crystal) semiconductor thin film 7 is obtained, by promoting crystallization of the thin film 7A by heating the film 7A to a molten or half-molten state and cooling the thin film 7A to a non-molten state through focused lamp annealing. The device is for executing these methods.