MEMORY CELL, NON-VOLATILE MEMORY DEVICE, AND ITS CONTROL METHOD

摘要

PROBLEM TO BE SOLVED: To provide a memory cell in which reliability for holding non-volatile storage in low power source voltage is improved. SOLUTION: Residual polarization of a ferroelectric capacitor is enlarged by swinging a plate line potential between a negative potential and a high potential being higher than a power source potential in store operation. Also, operation margin is widened by driving a plate line to a negative potential or a high potential in recall operation also. Thereby, reliability for holding non-volatile storage can be improved in a low power source potential.