DEPOSITION METHOD FOR THICK DIELECTRIC FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a film having a thickness of >=20μm by performing a treatment in single operation onto many wafers in the same batch successively using the continuous deposition in a commercial reactor. SOLUTION: The deposition method contains a step where plural layers in which each layer is thinner than the final thickness of the film to be deposited are deposited by PECVD(plasma enhanced chemical vapor deposition) in a reactor to deposit a dielectric film; and a step where the above reactor is subjected to cleaning between deposition for one layer and deposition for the next layer.