ASHING APPARATUS AND ASHING METHOD OF PHOTORESIST LAYER USING THE SAME

摘要

PURPOSE: An apparatus and a method for ashing a photoresist layer are provided to be capable of slowly heating a wafer without popping phenomenon of the photoresist layer. CONSTITUTION: A gas supply part(105) is supplied a processing and a plasma gases into a chamber(100) via an inlet(110). A vacuum exhaust part(115) is controlled a pressure in the chamber by exhausting the gases via an outlet(120). A heating plate(125) is located at lower portion of a wafer(W) to slowly heat the wafer(W) coated a photoresist layer. A lift pin(130) is formed between the wafer and the heating plate(125) for lift-up and lift-down of the wafer. An operating part(140) is controlled the lift-up speed of the lift pin.