发明名称 Stacked piezoelectric device and method of fabrication thereof
摘要 A stacked piezoelectric device and a method of fabrication thereof includes a piezoelectric stack having a first side electrode and a second side electrode, piezoelectric layers and internal electrode layers. The piezoelectric layers and internal electrode layers have substantially the same area. The internal electrode layers have ends thereof exposed to one side of the stack. The first side electrode includes first insulative portions formed at the ends of alternate ones of the internal electrode layers and a first conductive portion formed over the first insulative portions. The second side electrode is similarly configured to form insulative portions at the other ends. The first and second insulative portions are formed of an insulative resin, while the first and second conductive portions are formed of a conductive resin. The first and second conductive portions are also formed to directly cover the ends of the internal electrode layers.
申请公布号 US6462464(B2) 申请公布日期 2002.10.08
申请号 US20010985270 申请日期 2001.11.02
申请人 DENSO CORPORATION 发明人 MITARAI SHINYA;KOBAYASHI MASAYUKI;MURAI ATSUSHI;SUGIURA AKIO;SATO KAZUHIDE;MIZUNO ISAO
分类号 H01L41/047;H01L41/083;H01L41/22;(IPC1-7):H01L41/083 主分类号 H01L41/047
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