发明名称 APPARATUS AND METHOD FOR CONVERTING IONS IN ION IMPLANTATION EQUIPMENT
摘要 PURPOSE: An ion transition apparatus and a method for ion transition in ion implantation equipment are provided to prevent contamination of the ion implantation equipment by exhausting rapidly magnesium vapor to the outside without recrystallizing magnesium. CONSTITUTION: An ion transition chamber(220) is used as a main body of an ion transition apparatus(200). A sublimation heater(227) is mounted on an inner wall of the ion transition chamber(220) in order to heat the ion transition chamber(220). A lump of magnesium is loaded on an inner bottom of the ion transition chamber(220). A collector cup(240) is connected with the ion transition chamber(220). An ion beam inlet portion(241) and an ion beam outlet portion(243) are formed at both ends of the collector cup(240). A heater(247) is installed on an inner wall of the collector cup(240) or on an outer wall of the collector cup(240). A cold trap(260) is connected with a bottom face of the collector cup(240). A plurality of cold ribs(265) are formed in an inside of the cold trap(260). An exhaust path(280) is connected with the cold trap(260) in order to exhaust magnesium vapor to the outside. A vacuum pump(290) is installed at an intermediate point of the exhaust path(280).
申请公布号 KR20020077592(A) 申请公布日期 2002.10.12
申请号 KR20010017353 申请日期 2001.04.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KO, YONG GYUN;SON, BYEONG U
分类号 H01L21/261;(IPC1-7):H01L21/261 主分类号 H01L21/261
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