| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has high ESD breakdown voltages against all surge cases without causing any malfunction, and to provide a method of manufacturing the device. SOLUTION: This semiconductor device is provided with an internal circuit, an input/output pad, and a branch circuit 27 which is connected to a lead-in wire 35 connecting the internal circuit and input/output pad to each other and outputs electric signals, corresponding to the electric signals impressed upon the wire 35 from its first and second terminals. The device is also provided with a clamp circuit constituted of a MOS transistor 28 which interrupts electrical communication when the absolute value of the difference between the voltage of an electric signal traveling from one terminal side and that of another electrical signal, traveling from the other terminal side is lower than a threshold voltage and realizes electrical communication, when the absolute value is equal to or higher than the threshold voltage. |
