FERROELECTRIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An FRAM(Ferroelectric Random Access Memory) device and a method for manufacturing the same are provided to be capable of easily connecting an upper electrode to a plate line. CONSTITUTION: A cell capacitor of an FRAM device comprises a cylindrical lower electrode(132), a ferroelectric film(134), and upper electrodes(136'139') composed of double conductive layers. The lower electrode(132) is provided with a cylindrical structure having a bottom for closing sidewalls and lower portions of the cylindrical structure. The ferroelectric film(134) is provided with a liner shape faced to inner sides of the cylindrical lower electrode(132). A gap-filling film(137) is formed between the first upper electrode(136') and the second upper electrode(139') for filling a capacitor hole. The second upper electrode(139') is electrically connected to a plate line(150).