发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To solve the problem of a semiconductor device in which inner leads formed on an insulating tape and protruding electrodes formed on electrodes of the semiconductor device are electrically connected that the outer shape of the sealing resin varies and unfilled parts are left because of the excessive influx of the sealing resin, and accordingly the mechanical strength is reduced and defects such as cracks occur when the distance between the protruding electrodes is large. SOLUTION: The inner leads 12 formed on the insulating tape 11 and the bump electrodes 10 formed on the electrodes 9 of the semiconductor device 8 are electrically connected. Metal protrusions 14 and copper foil 13 are formed between the bump electrodes 10. In this way, the distance between flow paths of the sealing resin is set smaller than that between the bump electrodes 12.</p>
申请公布号 JP2002313849(A) 申请公布日期 2002.10.25
申请号 JP20010112342 申请日期 2001.04.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UENO JUNICHI;MARUO TETSUMASA
分类号 H01L23/28;H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L23/28
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