发明名称 EVACUATION APPARATUS AND METHOD, SEMICONDUCTOR AND MANUFACTURING METHOD FOR LIQUID CRYSTAL SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To perform in a short time conductance valve control hardly affected by a gas flow rate, an external factor and the like by efficiently performing the opening degree correction of a conductance valve. SOLUTION: A prescribed degree of vacuum in an evacuation chamber 1 and the degree of vacuum when the last processing is performed are compared with each other and the data of valve opening degree is corrected in such a direction that a valve 2 provided between a pump 3 for evacuating the evacuation chamber 1 and the evacuation chamber 1 is opened when the degree of vacuum when the last processing is performed is higher than the prescribed degree of vacuum and in such a direction that the valve 2 is closed when the degree of vacuum when the last processing is performed is lower than the prescribed degree of vacuum, so that the process is processed. The quantity for correcting the data of the valve opening degree is determined according to the gas flow rate introduced to the evacuation chamber 1.
申请公布号 JP2002316035(A) 申请公布日期 2002.10.29
申请号 JP20010119265 申请日期 2001.04.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IMAMURA KOJI
分类号 B01J3/02;B01J3/00;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):B01J3/02;H01L21/306 主分类号 B01J3/02
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