NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A non-volatile memory device and a method for fabricating the same are provided to reduce a contact resistance and increase an alignment margin by forming a non-volatile memory having a low step portion. CONSTITUTION: A plurality of active regions for forming a channel and a source/drain of a memory cell transistor is separated by each field region. The active regions are extended to a Y-axis by each field region. Word lines of n number are extended to an X-axis on the active regions. A memory cell transistor is formed with a floating gate(106) and a control gate(110). A plurality of high density source/drain regions is formed on surfaces of exposed active regions between the separated word lines. A string selection line(SSL) and a ground selection line(GSL) are formed on each outside of the first word line and the n-th word line, respectively. The source/drain is shared by the cell transistors of n number. The memory cell transistors and gates of selective transistors include a floating gate(104), an ONO dielectric layer(106), a control gate(110), a hard mask layer(112), respectively. A bit line contact hole(124) is formed between the string selection lines(SSL). One bit line contact hole(124) is shared by two strings. Bit lines of k number are formed by inserting the first interlayer dielectrics(114,116) and the second interlayer dielectric(122) into the word lines. A common source line(CSL)(120) is formed between the ground selection lines(GSL). A metal contact hole is formed on the common source line(CSL)(120). The common source line(CSL)(120) is formed by burying a contact hole(118) penetrating the first interlayer dielectrics(114,116). A bit line contact hole(124) is not formed on the bit line of the metal contact hole. The hard mask layer(112) is formed by using SiON.