| 摘要 |
The present invention provides a method for forming a flash memory cell and comprises following steps. First, a substrate is provided. Then, a first polysilicon layer and a nitride layer are sequentially formed on the substrate. Next, a portion of the nitride layer and the polysilicon layer are removed to form a plurality of holes to expose the substrate. Following, an isolation dielectric is formed in those holes, wherein the isolation dielectric is gibbous in a sidewall of those holes and higher than the first polysilicon layer. Then, the nitride layer on the first polysilicon layer is removed. Last, a second polysilicon layer is conformally formed on the first polysilicon layer and the isolation dielectric.
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