发明名称 |
High density stacked MIM capacitor structure |
摘要 |
A first metal plug is formed in the first layer of dielectric. A freestanding second metal plug is created that aligns with and makes contact with the first metal plug, extending the first metal plug. The second metal plug is surrounded by an opening that has been created in layers of etch stop and dielectric. A layer of capacitor dielectric is deposited over the exposed surfaces of the first and second metal plugs and the inside surfaces of the opening that surrounds the second plug. A layer of metal is created over the capacitor dielectric inside the opening in the layers of etch stop and dielectric.
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申请公布号 |
US2002177271(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20020167864 |
申请日期 |
2002.06.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LEE TZYH-CHEANG;WONG SHYH-CHYI;LIN CHIH-HSIEN;HUANG CHI-FENG |
分类号 |
H01L21/02;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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