发明名称 |
WAFER-LEVEL TUNING OF BULK ACOUSTIC WAVE RESONATOR AND FILTER |
摘要 |
PROBLEM TO BE SOLVED: To manufacture a bulk acoustic wave element with a uniform operat ing frequency on a large-sized substrate. SOLUTION: In the case of manufacturing bulk acoustic elements by thin film layers formed on a substrate by a chemical vapor deposition process, by locally supplying a medium for promoting the chemical vapor deposition process to the substrate, the operating frequencies of the bulk acoustic wave elements can be tuned uniformly. |
申请公布号 |
JP2002353761(A) |
申请公布日期 |
2002.12.06 |
申请号 |
JP20020119478 |
申请日期 |
2002.04.22 |
申请人 |
NOKIA CORP |
发明人 |
KAITILA JYRKI;TIKKA PASI;ELLA JUHA |
分类号 |
C23C16/04;H03H3/013;H03H3/02;H03H3/04;(IPC1-7):H03H3/02 |
主分类号 |
C23C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|