发明名称 WAFER-LEVEL TUNING OF BULK ACOUSTIC WAVE RESONATOR AND FILTER
摘要 PROBLEM TO BE SOLVED: To manufacture a bulk acoustic wave element with a uniform operat ing frequency on a large-sized substrate. SOLUTION: In the case of manufacturing bulk acoustic elements by thin film layers formed on a substrate by a chemical vapor deposition process, by locally supplying a medium for promoting the chemical vapor deposition process to the substrate, the operating frequencies of the bulk acoustic wave elements can be tuned uniformly.
申请公布号 JP2002353761(A) 申请公布日期 2002.12.06
申请号 JP20020119478 申请日期 2002.04.22
申请人 NOKIA CORP 发明人 KAITILA JYRKI;TIKKA PASI;ELLA JUHA
分类号 C23C16/04;H03H3/013;H03H3/02;H03H3/04;(IPC1-7):H03H3/02 主分类号 C23C16/04
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