发明名称 SYSTEM FOR PROCESSING SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To obtain a system for processing a substrate in which cooling efficiency and processing speed of a heated substrate are enhanced and effective cooling is ensured even under atmospheric pressure or reduced pressure. SOLUTION: The system for processing a substrate comprises a cooling chamber 10 provided independently from a reaction chamber for depositing a film on a substrate 60 and having an opening 10a for taking in and out an object being cooled, or the substrate 60, a substrate mounting means 20 disposed in the cooling chamber 10 and mounting at least one substrate 60 carried into the cooling chamber 10, a gas supply means 30 provided with a brake filter 32 for supplying cooling gas substantially in parallel with the plane of the substrate 60 mounted on the substrate mounting means 20 from the shell side of the substrate 60, an exhaust means 40 disposed on the side substantially opposite to the gas supply means 30 while holding the substrate 60 between, and a movable gate valve 50 for closing the opening 10a of the cooling chamber 10.</p>
申请公布号 JP2002373890(A) 申请公布日期 2002.12.26
申请号 JP20010179246 申请日期 2001.06.13
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TAKAKUWA YASUNORI;YANAGISAWA AKIHIKO
分类号 C23C16/44;H01L21/31;H01L21/68;H01L21/683;(IPC1-7):H01L21/31 主分类号 C23C16/44
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