| 摘要 |
<p>A facet forming layer (12) consisting of a nitride semiconductor containing at least aluminum is formed on a substrate (11) consisting of gallium nitride (GaN). A facet plane inclined from a C plane is formed on the surface of the facet forming layer (12), and a selective growth layer (13) laterally grows from the inclined facet plane. As a result, the selective growth layer (13) can be substantially brought into lattice matching with an n-type clad layer (14) consisting of n-type AlGaN and grown on the selective growth layer, thereby producing, e.g., a crack-free laser structure by crystal growth.</p> |
