| 摘要 |
PROBLEM TO BE SOLVED: To obtain a monomr as a raw material of a polymer for resist material, having excellent properties in all of adhesion, transparency and etching resistance, in a photolithography using a light having wave length shorter than 3000 nm, especially using Ar-F excimer laser light as the light source, and the polymer thereof, the resist material containing the polymer as the base resin, and to provided a method for forming patterns by using the resist material. SOLUTION: The (meth)acrylate compound is represented by formula (1) [wherein, R<1> shows hydrogen atom or methyl group]. [formula (1)]. |
