发明名称 |
STENCIL MASK AND ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURED BY USING THE SAME STENCIL MASK, AND ITS MANUFACTURING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a stencil mask which can practically be applied with pattern correction and is manufactured by performing the correction in a relatively short time although the conventional pattern correction of the stencil mask using finite element method stress analysis requires an unpracticable and unrealistic processing time since object stencil holes are very many. SOLUTION: When stencil mask pattern data are corrected by stress analysis, a displacement quantity is calculated by using stencil holes larger than specific size among respective stencil patterns. Consequently, stencil mask pattern data having a pattern having been correct in an industrially applicable relatively-short time are obtained and then the stencil mask having a desired pattern formed can be obtained by being manufactured according to the pattern.</p> |
申请公布号 |
JP2003017397(A) |
申请公布日期 |
2003.01.17 |
申请号 |
JP20010203533 |
申请日期 |
2001.07.04 |
申请人 |
SONY CORP |
发明人 |
ASHIDA ISAO |
分类号 |
G03F1/20;G03F1/22;G03F1/68;G03F1/70;G06F17/50;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 |
主分类号 |
G03F1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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